ENERGIES FOR ATOMIC EMISSIONS FROM DEFECT SITES ON THE SI SURFACES - THE EFFECTS OF HALOGEN ADSORBATES

A study was made of the energies for ejection of Si atoms and SiCl mol ecules from defect sites on Si (100) and (110) surfaces, including ada toms, kinks, and vacancies, with and without interaction with Cl adsor bates. It is found that the energies for emitting a Si atom from defec t sites are smaller than those for the perfect site and almost proport ional to the coordination number for the Si (110) surface. It is also found that the interaction of Cl with defects reduces the energy for t he ejection of a Si atom and a SiCl molecule, depending on the adsorpt ion site.