Elz. Velasquez et al., EFFECT OF PLASMA-ETCHING, CARBON CONCENTRATION, AND BUFFER LAYER ON THE PROPERTIES OF A-SI-H A-SI1-XCX-H MULTILAYERS/, Journal of applied physics, 75(1), 1994, pp. 543-548
Small angle x-ray diffraction was used to diagnose the structural prop
erties of a-Si:H/a-Si1-xCx:H multilayers deposited by rf glow discharg
e. Precise deposition rates were obtained from the experimental data.
Two growth parameters were varied: the methane concentration in the ga
seous mixture and the intermediary plasma etching time between consecu
tive depositions. Some samples had an additional buffer layer between
the substrate and the heterostructure. The sharpest interfaces were ob
tained on samples with the intermediate buffer layer, plasma etching t
imes of at least 2 min, and diamond-like a-Si1-xCx:H layers. Profiling
by Auger electron spectroscopy and small angle x-ray diffraction resu
lts were used to estimate the interface thickness.