EFFECT OF PLASMA-ETCHING, CARBON CONCENTRATION, AND BUFFER LAYER ON THE PROPERTIES OF A-SI-H A-SI1-XCX-H MULTILAYERS/

Small angle x-ray diffraction was used to diagnose the structural prop erties of a-Si:H/a-Si1-xCx:H multilayers deposited by rf glow discharg e. Precise deposition rates were obtained from the experimental data. Two growth parameters were varied: the methane concentration in the ga seous mixture and the intermediary plasma etching time between consecu tive depositions. Some samples had an additional buffer layer between the substrate and the heterostructure. The sharpest interfaces were ob tained on samples with the intermediate buffer layer, plasma etching t imes of at least 2 min, and diamond-like a-Si1-xCx:H layers. Profiling by Auger electron spectroscopy and small angle x-ray diffraction resu lts were used to estimate the interface thickness.