ELECTRODEPOSITION AND CHARACTERIZATION OF GAAS POLYCRYSTALLINE THIN-FILMS

The preparation of polycrystalline GaAs films by using electrodepositi on technology is described. Using scanning electron microscopy, x-ray diffraction, spectrophotometry, and a CG-1 HF C-V tester, the characte ristics of the films prepared have been measured. The results show tha t the stoichiometry of the film approximates to GaAs. On the basis of Mott-Schottky plot, the position of energy band edges of film is calcu lated. Finally, the photoelectrochemical characteristic of the electro deposited film/electrolyte junction is measured.