BEHAVIOR OF A RECTIFYING JUNCTION AT THE INTERFACE BETWEEN POROUS SILICON AND ITS SUBSTRATE

Authors
PULSFORD NJ RIKKEN GLJA KESSENER YARR LOUS EJ VENHUIZEN AHJ
Citation
Nj. Pulsford et al., BEHAVIOR OF A RECTIFYING JUNCTION AT THE INTERFACE BETWEEN POROUS SILICON AND ITS SUBSTRATE, Journal of applied physics, 75(1), 1994, pp. 636-638
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
1
Year of publication
1994
Pages
636 - 638
Database
ISI
SICI code
0021-8979(1994)75:1<636:BOARJA>2.0.ZU;2-A
Abstract
The current injection into metal/porous Si/bulk Si diodes is investiga ted by transport and photoresponse measurements. Under low forward bia s, the diode current is determined by the space charge region at the p orous Si/bulk Si interface. The activation energy of the photovoltage shows that holes are injected into porous Si states which have little quantum confinement. This is discussed in terms of the confinement mod el for porous Si photoluminescence.