DEEP-LEVEL TRANSIENT SPECTROSCOPY INVESTIGATION OF A DEEP TRAP IN FLOAT-ZONE SI

By means of deep-level transient spectroscopy we have investigated def ect states in float-zone, boron-doped Si material subjected to electro n irradiation. Attention was mainly focused on the Ev+0.34 eV peak, th e emergence of which in the spectra shows a delay with temperature in relation to the beginning of the decay of the Ev+0.28 eV peak of the c arbon interstitial defect. In addition, the concentration of the Ev+0. 34 eV level was found to increase with the boron content of the Si mat erial. Our results point to a carbon-related, boron-dependent structur e although the role of boron is not clear from the present data.