CARRIER COMPENSATION INDUCED BY RAPID THERMAL ANNEALING IN UNDOPED INP

Authors
KADOUN A BREMOND G BARBIER D LAUGIER A TARDY J
Citation
A. Kadoun et al., CARRIER COMPENSATION INDUCED BY RAPID THERMAL ANNEALING IN UNDOPED INP, Journal of applied physics, 75(1), 1994, pp. 648-650
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
1
Year of publication
1994
Pages
648 - 650
Database
ISI
SICI code
0021-8979(1994)75:1<648:CCIBRT>2.0.ZU;2-F
Abstract
The region beneath the interface of an InGaAs layer grown onto an undo ped InP substrate by molecular beam epitaxy was investigated before an d after rapid thermal annealing. Capacitance-voltage measurements reve aled a depletion region in the underlying InP due to donor compensatio n that is mainly caused by the Fe-related E(c)-0.63 eV-deep level obse rved by deep level transient spectroscopy.