THERMAL-ANALYSIS ON ZONE-MELTING RECRYSTALLIZATION OF SILICON-ON-INSULATOR FILMS USING A FINITE-DIFFERENCE METHOD

Authors
RICHTER HH TILLACK B ANDRA H WEINELT W
Citation
Hh. Richter et al., THERMAL-ANALYSIS ON ZONE-MELTING RECRYSTALLIZATION OF SILICON-ON-INSULATOR FILMS USING A FINITE-DIFFERENCE METHOD, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 173(1-2), 1993, pp. 59-62
Citations number
11
Categorie Soggetti
Material Science
Journal title
Materials science & engineering. A, Structural materials: properties, microstructure and processing → ACNP
ISSN journal
09215093
Volume
173
Issue
1-2
Year of publication
1993
Pages
59 - 62
Database
ISI
SICI code
0921-5093(1993)173:1-2<59:TOZROS>2.0.ZU;2-6
Abstract
The effects of important parameters on the zone-melting recrystallizat ion process with a linear heat source were investigated numerically. L n order to describe undercooling effects and the presence of a mixed p hase during the melting and solidification process, an enthalpy formul ation of the Stefan problem was chosen. The initial-boundary-value pro blem for the determination of the temperature field and for the phase fraction is solved by a finite difference method.