VIBRATIONAL CRYSTALLIZATION OF OPTOELECTRONIC MATERIALS

This work contributes to the direct growth of bulk substrate crystals of TSS (ternary solid solutions). A combination of our original method s CAM-S (crystallization method providing composition autocontrol in s itu) and COM-S (calculation method of optimal molten solution composit ion) has been used. The crystallization process has been simultaneousl y accelerated by low-frequency and low-energy vibrational stirring. Th is new approach enables the growth of crystalline ingots at first with the high constancy of the lattice parameter a, being a priori chosen and calculated throughout the significant part of the ingot length, an d second the experimental data have been therefore received approximat e to 20 times faster. This approach was applied on (Ga-In)Sb TSS. The deviation from the a constancy was less than 0.033% (0.2 pm) with a 75 mm length. Crystals possess a mosaic structure at this stage.