Jj. Venkrbec et al., CRYSTALLIZATION OF TUNABLE SUBSTRATE OPTOELECTRONIC MATERIALS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 173(1-2), 1993, pp. 197-200
This work can partially contribute to the direct growth of bulk substr
ate crystals of TSS (Ternary Solid Solutions) -(Ga.In)Sb - with a latt
ice parameter ''a'' constant throughout the significant part of the in
got length. The combination of our original methods CAM-S (A Crystalli
zation Method Providing Composition Autocontrol in Situ) and COM-S (Ca
lculation Method of Optimal Molten-Solution Composition) has been used
. Potential possibilities of COM-S are illustrated on 3D ternary phase
diagrams of several III-V systems. The combination of both methods pe
rmits growth of crystalline ingots with ''a'' a priori chosen and calc
ulated. This is illustrated in the growth of Ga-In-Sb TSS. The deviati
on from the constancy of ''a'' can be less than 0.033% (0.2 pm) with a
75 mm length. Crystals possess a mosaic structure at this stage.