CRYSTALLIZATION OF TUNABLE SUBSTRATE OPTOELECTRONIC MATERIALS

This work can partially contribute to the direct growth of bulk substr ate crystals of TSS (Ternary Solid Solutions) -(Ga.In)Sb - with a latt ice parameter ''a'' constant throughout the significant part of the in got length. The combination of our original methods CAM-S (A Crystalli zation Method Providing Composition Autocontrol in Situ) and COM-S (Ca lculation Method of Optimal Molten-Solution Composition) has been used . Potential possibilities of COM-S are illustrated on 3D ternary phase diagrams of several III-V systems. The combination of both methods pe rmits growth of crystalline ingots with ''a'' a priori chosen and calc ulated. This is illustrated in the growth of Ga-In-Sb TSS. The deviati on from the constancy of ''a'' can be less than 0.033% (0.2 pm) with a 75 mm length. Crystals possess a mosaic structure at this stage.