CRYSTALLIZATION OF AMORPHOUS THIN LPCVD SI FILMS - IN-SITU TEM MEASUREMENT OF NUCLEATION AND GRAIN-GROWTH RATES

Authors
GUILLEMET JP DEMAUDUIT B PIERAGGI B BIELLEDASPET D SCHEID E
Citation
Jp. Guillemet et al., CRYSTALLIZATION OF AMORPHOUS THIN LPCVD SI FILMS - IN-SITU TEM MEASUREMENT OF NUCLEATION AND GRAIN-GROWTH RATES, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 173(1-2), 1993, pp. 377-380
Citations number
16
Categorie Soggetti
Material Science
Journal title
Materials science & engineering. A, Structural materials: properties, microstructure and processing → ACNP
ISSN journal
09215093
Volume
173
Issue
1-2
Year of publication
1993
Pages
377 - 380
Database
ISI
SICI code
0921-5093(1993)173:1-2<377:COATLS>2.0.ZU;2-E
Abstract
The influence of deposition conditions on the solid phase crystallisat ion of as-deposited amorphous Si layers obtained by low pressure chemi cal vapor deposition has been investigated by ''in situ'' isothermal a nnealing in a transmission electron microscope. Both nucleation and gr ain growth rates have been determined. Growth process was found to be linear with an activation energy of 2.4 eV. Nucleation kinetics have b een calculated from both the size of the crystallites and the grain gr owth rates. Final grain size has been shown to depend on deposition pr ocedure.