HIGH-QUALITY ALUMINUM NITRIDE EPITAXIAL LAYERS GROWN ON SAPPHIRE SUBSTRATES

Authors
SAXLER A KUNG P SUN CJ BIGAN E RAZEGHI M
Citation
A. Saxler et al., HIGH-QUALITY ALUMINUM NITRIDE EPITAXIAL LAYERS GROWN ON SAPPHIRE SUBSTRATES, Applied physics letters, 64(3), 1994, pp. 339-341
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
3
Year of publication
1994
Pages
339 - 341
Database
ISI
SICI code
0003-6951(1994)64:3<339:HANELG>2.0.ZU;2-X
Abstract
In this letter we report the growth of high quality AlN epitaxial laye rs on sapphire substrates. The AlN grown on (00.1) sapphire exhibited a better crystalline quality than that grown on (01.2) sapphire. An x- ray rocking curve of AlN on (00.1) Al2O3 yielded a full width at half- maximum of 97.2 arcsec, which is the narrowest value reported to our k nowledge. The AlN peak on (01.2) Al2O3 was about 30 times wider. The a bsorption edge measured by ultraviolet transmission spectroscopy for A lN grown on (00.1) Al2O3 was about 197 nm.