SIMULTANEOUS SHALLOW-JUNCTION FORMATION AND GATE DOPING P-CHANNEL METAL-SEMICONDUCTOR-OXIDE FIELD-EFFECT TRANSISTOR PROCESS USING COBALT SILICIDE AS A DIFFUSION DOPING SOURCE

Submicron p-metal-semiconductor-oxide field-effect transistors (MOSFET s) have been fabricated using cobalt silicide as a diffusion source fo r forming shallow p-n junctions and as a doping source for undoped as- deposited amorphous silicon gate (SADDS). The thermal stability of CoS i2 on polycrystalline silicon is shown to be significantly improved by using as-deposited amorphous silicon instead of as-deposited polycrys talline silicon as the gate material. The p-MOSFETs fabricated using t he SADDS process exhibit excellent characteristics and open up the pos sibility of eliminating several masks and implants in more complicated complimentary metal-oxide semiconductor processes.