OXYGEN CONTROL OF DC-SPUTTERED BI2SR2CA1CU2O8+DELTA FILMS

Authors
AUGE J RUDIGER U FRANK H ROSKOS HG GUNTHERODT G KURZ H
Citation
J. Auge et al., OXYGEN CONTROL OF DC-SPUTTERED BI2SR2CA1CU2O8+DELTA FILMS, Applied physics letters, 64(3), 1994, pp. 378-380
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
3
Year of publication
1994
Pages
378 - 380
Database
ISI
SICI code
0003-6951(1994)64:3<378:OCODBF>2.0.ZU;2-O
Abstract
We report the preparation of T(c)-optimized Bi2Sr2Ca1Cu2O8+delta thin films on SrTiO3 substrates using a planar dc-sputtering method. The ox ygen content of these films is adjusted in situ by controlling the oxy gen flow during sputtering. The oxygen content can be varied continuou sly from the overdoped state (T(c)=72 K) to the condition with optimum oxygen content (T(c)=88 K), and further, to the underdoped state (T(c )=76 K). The oxygen content is determined by x-ray measurements of the c-axis lattice parameter.