MASKLESS TEXTURE ETCHING OF GAAS

Authors
LANDIS GA FATEMI NS YOUNG MJ BAILEY SG
Citation
Ga. Landis et al., MASKLESS TEXTURE ETCHING OF GAAS, Journal of the Electrochemical Society, 140(12), 1993, pp. 120000183-120000184
Citations number
4
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
140
Issue
12
Year of publication
1993
Pages
120000183 - 120000184
Database
ISI
SICI code
0013-4651(1993)140:12<120000183:MTEOG>2.0.ZU;2-R
Abstract
Chemical etches to produce a low-reflectance textured surface on GaAs surfaces were investigated. The Caros etch at 1.3 degrees C produced a fine (20 nm) random surface texture on GaAs. Reduced optical reflecti vity was seen, with the greatest reduction occurring at short waveleng th.