PREDICT-1.6 - MODELING OF METAL SILICIDE PROCESSES

Citation
Cm. Osburn et al., PREDICT-1.6 - MODELING OF METAL SILICIDE PROCESSES, Journal of the Electrochemical Society, 140(12), 1993, pp. 3660-3667
Citations number
29
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
140
Issue
12
Year of publication
1993
Pages
3660 - 3667
Database
ISI
SICI code
0013-4651(1993)140:12<3660:P-MOMS>2.0.ZU;2-8
Abstract
A new version of the PREDICT process model has been developed which up dates many of the existing models with new data describing metal silic ide formation and dopant redistribution. The new program also incorpor ates several novel features, not previously included as part of a proc ess modeling program: (i) silicide resistivity as formed, after ion im plantation, and after agglomeration, (ii) roughening of the silicide/s ilicon interface, and (iii) profile convolution routines to account fo r secondary ion mass spectroscopy cascade mixing and silicide rougheni ng. The latter algorithms provide a bridge so that experimental data c an be compared to model predictions.