A new version of the PREDICT process model has been developed which up
dates many of the existing models with new data describing metal silic
ide formation and dopant redistribution. The new program also incorpor
ates several novel features, not previously included as part of a proc
ess modeling program: (i) silicide resistivity as formed, after ion im
plantation, and after agglomeration, (ii) roughening of the silicide/s
ilicon interface, and (iii) profile convolution routines to account fo
r secondary ion mass spectroscopy cascade mixing and silicide rougheni
ng. The latter algorithms provide a bridge so that experimental data c
an be compared to model predictions.