ACCELERATED AGING FOR ALGAINP VISIBLE LASER-DIODES

Authors
ENDO K KOBAYASHI K FUJII H UENO Y
Citation
K. Endo et al., ACCELERATED AGING FOR ALGAINP VISIBLE LASER-DIODES, Applied physics letters, 64(2), 1994, pp. 146-148
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
2
Year of publication
1994
Pages
146 - 148
Database
ISI
SICI code
0003-6951(1994)64:2<146:AAFAVL>2.0.ZU;2-1
Abstract
Accelerated aging tests were carried out under constant current condit ions at an ambient temperature range of 100-150 degrees C for 670 Mn b and AlGaInP visible laser diodes. A degradation rate activation energy of 0.8 eV and an extrapolated lifetime of 10(6) h at 50 degrees C has been obtained. It is reported for the first time that lasing waveleng th shifts of up to 20 nm to shorter wavelengths accompanied the thresh old current increase. This is attributed to disordering of the natural superlattice in the GaInP active layer.