HIGH-POWER DIODE-LASER-PUMPED INASSB GASB AND GAINASSB/GASB LASERS EMITTING FROM 3-MU-M TO 4-MU-M/

Authors
LE HQ TURNER GW EGLASH SJ CHOI HK COPPETA DA
Citation
Hq. Le et al., HIGH-POWER DIODE-LASER-PUMPED INASSB GASB AND GAINASSB/GASB LASERS EMITTING FROM 3-MU-M TO 4-MU-M/, Applied physics letters, 64(2), 1994, pp. 152-154
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
2
Year of publication
1994
Pages
152 - 154
Database
ISI
SICI code
0003-6951(1994)64:2<152:HDIGAG>2.0.ZU;2-1
Abstract
Diode-array-pumped GaInAsSb/GaSb and InAsSb/GaSb double heterostructur e lasers operated at 85 K yielded 95 mW average and 1.5 W peak power p er facet at 3 mu m, and 50 mW average and 0.8 W peak power facet at 4 mu m. The highest operational temperature was 210 K for the 3-mu m qua ternary and 150 K for the 4-mu m ternary.