REDUCTION OF SECONDARY DEFECTS IN BF, IMPLANTED SI(100) BY ION-BEAM DEFECT ENGINEERING

Authors
ZHAO QT WANG ZI XU TB ZHU PR ZHOU JS
Citation
Qt. Zhao et al., REDUCTION OF SECONDARY DEFECTS IN BF, IMPLANTED SI(100) BY ION-BEAM DEFECT ENGINEERING, Applied physics letters, 64(2), 1994, pp. 175-177
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
2
Year of publication
1994
Pages
175 - 177
Database
ISI
SICI code
0003-6951(1994)64:2<175:ROSDIB>2.0.ZU;2-T
Abstract
Reduction of secondary defects in 50 keV, 2x10(15) BF2/cm(2) implanted Si(100) has been studied by Rutherford backscattering and channeling technique. Secondary defects with high densities have been found in BF 2 implanted Si(100) after thermal annealing and rapid thermal annealin g. However, a noticeable reduction of secondary defects in BF2 damaged region was observed when a buried amorphous layer was formed by an ad ditional irradiation of 1.0 MeV Si+ ions prior to annealing (i.e., ion beam defect engineering process).