REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAAS (111)A

Authors
FAHY MR SATO K JOYCE BA
Citation
Mr. Fahy et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAAS (111)A, Applied physics letters, 64(2), 1994, pp. 190-192
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
2
Year of publication
1994
Pages
190 - 192
Database
ISI
SICI code
0003-6951(1994)64:2<190:RHEIOD>2.0.ZU;2-#
Abstract
We have made a study of reflection high-energy electron diffraction in tensity oscillations during the growth of GaAs on singular GaAs (111)A substrates by molecular beam epitaxy. The behavior is quite different from growth of GaAs on (001) orientated substrates in that the oscill ation period is growth temperature and AS(4):Ga flux ratio dependent. We speculate that this is due to the (110)-like configuration of the ( 111)A 2x2 reconstructed surface, which requires direct interaction of a Ga and an As atom for growth to occur.