REFRACTIVE-INDEX OF (ALXGA1-X)(0.5)IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Authors
MOSER M WINTERHOFF R GENG C QUEISSER I SCHOLZ F DORNEN A
Citation
M. Moser et al., REFRACTIVE-INDEX OF (ALXGA1-X)(0.5)IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 64(2), 1994, pp. 235-237
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
2
Year of publication
1994
Pages
235 - 237
Database
ISI
SICI code
0003-6951(1994)64:2<235:RO(GBM>2.0.ZU;2-Y
Abstract
Ordered and disordered (AlxGa1-x)(0.5)In0.5P (x=O, 0.33, 0.66) layers have been grown on GaAs by metalorganic vapor phase epitaxy. The compl ex refractive index below and above the band edge has been determined by transmission experiments and ellipsometry. We have observed, that o rdered and disordered samples only differ near the fundamental band ga p with respect to these properties.