STUDIES OF SUBMICRON GOLD ISLANDS ON SILICON BY STM

Authors
GHEBER LA GORODETSKY G VOLTERRA V
Citation
La. Gheber et al., STUDIES OF SUBMICRON GOLD ISLANDS ON SILICON BY STM, Thin solid films, 238(1), 1994, pp. 1-3
Citations number
15
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
238
Issue
1
Year of publication
1994
Pages
1 - 3
Database
ISI
SICI code
0040-6090(1994)238:1<1:SOSGIO>2.0.ZU;2-6
Abstract
The formation and electrical properties of discrete islands in discont inuous Au films on Si(111) were studied with a scanning tunneling micr oscope (STM). Ohmic electrical contact between the STM tip and isolate d gold islands was established and I-V characteristics of the Au-Si ju nctions were measured. A typical Schottky diode behaviour with idealit y factor close to 1 was observed. The STM appears to be an appropriate probe for electrical measurements of nano-scale diodes.