THE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF CUINSE2

Authors
JONES PA JACKSON AD LICKISS PD PILKINGTON RD TOMLINSON RD
Citation
Pa. Jones et al., THE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF CUINSE2, Thin solid films, 238(1), 1994, pp. 4-7
Citations number
19
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
238
Issue
1
Year of publication
1994
Pages
4 - 7
Database
ISI
SICI code
0040-6090(1994)238:1<4:TPCOC>2.0.ZU;2-1
Abstract
We report the first successful chemical vapour deposition (CVD) of cha lcopyrite CuInSe2. Thin films with compositions around the Cu:In:Se st oichiometric ratio 1:1:2 have been grown using a glow discharge enhanc ed CVD process. Film structure is analysed using X-ray camera techniqu es and Rutherford backscattering spectroscopy.