TRANSPORT-PROPERTIES OF DELTA-DOPED SISB SUPERLATTICES

Authors
EISELE I WITTMANN F LIFSHITS VG ZOTOV AV DITINA ZZ RYZHKOV SV
Citation
I. Eisele et al., TRANSPORT-PROPERTIES OF DELTA-DOPED SISB SUPERLATTICES, Thin solid films, 238(1), 1994, pp. 27-30
Citations number
14
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
238
Issue
1
Year of publication
1994
Pages
27 - 30
Database
ISI
SICI code
0040-6090(1994)238:1<27:TODSS>2.0.ZU;2-N
Abstract
Delta-doped Si(100):Sb superlattices with period varying from 1.5 to 1 00 nm have been characterized by resistivity and Hall-effect measureme nts. Extremely high mean electron concentrations up to 8 x 10(20) cm-3 and electron mobilities exceeding the values for uniformly-doped bulk Si by a factor of about two have been achieved in short-period superl attices.