ON A DIFFUSION MECHANISM OF INTRINSIC STRESS-RELAXATION IN AUGE-GAAS CONTACTS

Authors
TKHORIK YA VDOVIN VI KHAZAN LS KONAKOVA RV MILENIN VV NAUMOVETS AA
Citation
Ya. Tkhorik et al., ON A DIFFUSION MECHANISM OF INTRINSIC STRESS-RELAXATION IN AUGE-GAAS CONTACTS, Thin solid films, 238(1), 1994, pp. 51-53
Citations number
8
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
238
Issue
1
Year of publication
1994
Pages
51 - 53
Database
ISI
SICI code
0040-6090(1994)238:1<51:OADMOI>2.0.ZU;2-X
Abstract
A striped ordered structure in the interface plane was observed by mea ns of TEM in the AuGe-GaAs heterosystem. This effect seems to result f rom a diffusion mechanism of elastic stress relaxation, and not from t he ordinary dislocation mechanism.