Native defects and impurity diffusion in various CdS materials were st
udied by combined techniques involving cathodoluminescence (CL) and el
ectron probe microanalysis (EPMA). CL spectra, colour CL micrographs a
nd EPMA modes were applied to map the defect diffusion and distributio
n after low energy electron bombardment (LEEB). Different contrast mod
ifications were induced by LEEB. Particle ejection and defect diffusio
n have been accounted for in explaining the observed phenomena.