Hot-filament chemical vapor deposition was employed to study the effec
t of gas flow dynamics on diamond growth. The density and growth rate
of diamond within the patterned region of copper and silicon substrate
s was found to be twice as large as compared with that on a flat (unpa
tterned) surface. The density of diamond nucleation increased on patte
rned silicon and copper substrates with an increase in the methane con
centration from 1.0% to 1.5% in the gas mixture of methane and hydroge
n (CH4 + H-2). Selective growth of diamond was achieved without using
diamond seed or paste, or scratching the patterned silicon substrate.
About 90% diamond coverage and a continuous diamond film (75 mum) were
achieved on the square-patterned silicon and copper substrates, respe
ctively, at a methane concentration of 1.5%. The growth of diamond wit
hin the wells was discussed on the basis of gas flow dynamics. The pre
sent analysis is consistent with available theoretical models.