THE EFFECT OF SUBSTRATE ORIENTATION ON WSI2 FORMATION

Authors
SINGH A KHOKLE WS LAL K
Citation
A. Singh et al., THE EFFECT OF SUBSTRATE ORIENTATION ON WSI2 FORMATION, Thin solid films, 238(1), 1994, pp. 155-157
Citations number
10
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
238
Issue
1
Year of publication
1994
Pages
155 - 157
Database
ISI
SICI code
0040-6090(1994)238:1<155:TEOSOO>2.0.ZU;2-E
Abstract
The effect of substrate orientation on tungsten silicide formation has been studied. It has been found that the silicide on Si(100) forms at low temperature, has fine grained surface morphology and has low shee t resistance as compared with that formed on Si(111). We attribute thi s to the difference in microstructure of the films, due mainly to the difference in the nucleation process for the two substrates.