SHALLOW TRENCH ISOLATION DOUBLE-DIODE ELECTROSTATIC DISCHARGE CIRCUITAND INTERACTION WITH DRAM OUTPUT CIRCUITRY

Authors
VOLDMAN SH GROSS VP HARGROVE MJ NEVER JM SLINKMAN JA OBOYLE MP SCOTT TS DELECKI JJ
Citation
Sh. Voldman et al., SHALLOW TRENCH ISOLATION DOUBLE-DIODE ELECTROSTATIC DISCHARGE CIRCUITAND INTERACTION WITH DRAM OUTPUT CIRCUITRY, Journal of electrostatics, 31(2-3), 1993, pp. 237-262
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Journal of electrostatics → ACNP
ISSN journal
03043886
Volume
31
Issue
2-3
Year of publication
1993
Pages
237 - 262
Database
ISI
SICI code
0304-3886(1993)31:2-3<237:STIDED>2.0.ZU;2-T
Abstract
Electrostatic discharge (ESD) performance of a shallow-trench-isolatio n double-diode protection circuit in CMOS technology is discussed. Thi s paper highlights the sensitivities of these devices to semiconductor process parameters, interaction with chip circuitry and advanced fail ure analysis techniques.