FIELDEMITTER-BASED ESD-PROTECTION CIRCUITS FOR HIGH-FREQUENCY DEVICESAND ICS

Authors
BOCK K HARTNAGEL HL
Citation
K. Bock et Hl. Hartnagel, FIELDEMITTER-BASED ESD-PROTECTION CIRCUITS FOR HIGH-FREQUENCY DEVICESAND ICS, Journal of electrostatics, 31(2-3), 1993, pp. 263-279
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Journal of electrostatics → ACNP
ISSN journal
03043886
Volume
31
Issue
2-3
Year of publication
1993
Pages
263 - 279
Database
ISI
SICI code
0304-3886(1993)31:2-3<263:FECFHD>2.0.ZU;2-5
Abstract
Based on investigations to find the thresholds of the ESD voltage indu cing degradations to GaAs Schottky diodes and MESFETS, we have develop ed and fabricated new ESD protection structures based on electron fiel d emission. Using these GaAs electron field-emitter wedges we have des igned and fabricated protection circuits integrated in GaAs microwave devices to prevent the devices from degradation caused by ESD.