CORRELATION BETWEEN THE DISLOCATION CONFIGURATION AND THE RELATED SCATTERING BEHAVIOR OF HCP SINGLE-CRYSTALS BY APPLICATION OF THE FOURIER TRANSFORMATION APPROACH

A new procedure for studying the diffraction intensity distribution fo r real single crystals is proposed for the case of nearly parallel dis locations. This procedure is based on the Fourier transformation algor ithm, by means of which the diffraction intensity can be estimated by studying the local dislocation arrangement. By cutting and etching a s pecific crystallographic plane, which was nearly parallel to the diffr action plane to be studied, the arrangements of linear dislocations co uld be simplified as point fields. Thus, the displacement field in the direction of the diffraction vector could be estimated. The diffracti on behaviour which is determined by the displacement field was then ob tained by calculating a cross correlation function. The results derive d from this procedure exhibit good agreement with those from experimen tal measurements.