RESPONSE OF A PASSIVATED IMPLANTED PLANAR SILICON (PIPS) DETECTOR FORHEAVY-IONS WITH ENERGIES BETWEEN 25 AND 360-KEV

Authors
OETLIKER M
Citation
M. Oetliker, RESPONSE OF A PASSIVATED IMPLANTED PLANAR SILICON (PIPS) DETECTOR FORHEAVY-IONS WITH ENERGIES BETWEEN 25 AND 360-KEV, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 337(1), 1993, pp. 145-148
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
337
Issue
1
Year of publication
1993
Pages
145 - 148
Database
ISI
SICI code
0168-9002(1993)337:1<145:ROAPIP>2.0.ZU;2-1
Abstract
Measurements of the energy response of a passivated implanted planar s ilicon (PIPS) detector for a variety of ions at low energies are prese nted. Such measurements are needed for the calibration of a PIPS detec tor used in a space borne time-of-flight mass spectrometer. Comparison s to similar measurements with state of the art silicon surface barrie r (SSB) detectors show a weaker energy response and a much lower noise level of the PIPS detector. A dependence of the energy response on th e incident angle of the ions was observed which is attributed to chann eling of ions within the silicon crystal of the detector.