XPS ANALYSIS OF GALLIUM OXIDES

Authors
CARLI R BIANCHI CL
Citation
R. Carli et Cl. Bianchi, XPS ANALYSIS OF GALLIUM OXIDES, Applied surface science, 74(1), 1994, pp. 99-102
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
74
Issue
1
Year of publication
1994
Pages
99 - 102
Database
ISI
SICI code
0169-4332(1994)74:1<99:XAOGO>2.0.ZU;2-S
Abstract
Samples of Ga2O, synthesized by reacting Ga2O3 and metallic gallium, a re analyzed by XPS measurements. These samples reveal the presence of a new photoelectron signal, assigned to Ga(I), with 3d binding energy of 19.0 eV, which is lower than the measured Ga(III)(3d) binding energ y (20.6 eV) and higher than the measured Ga0(3d) binding energy (18.5 eV). A comparison between available XPS data on the Ga2O3/HZSM-5 catal ytic system and the gallium binding energies measured in this work is proposed.