AN ESD KINETIC-ENERGY DISTRIBUTION STUDY OF TRIMETHYLSILANE ADSORBED ON SI(100)

Electron-stimulated desorption (ESD) kinetic energy distributions (KED s) of H+ and H- have been obtained from trimethylsilane-dosed Si(100) as a function of trimethylsilane exposure. Both H+ and H- KEDs exhibit bimodal KEDs, suggesting that hydrogen is bound in two distinct state s for trimethylsilane-covered Si(100). ESD KED and secondary ion mass spectrometry (SIMS) data suggest that most species present on the fres hly dosed surface are still present in residual amounts after gentle a nneals to 173 K, indicating that molecularly adsorbed trimethylsilane is only weakly bound to the surface and that some trimethylsilane diss ociates on the Si(100) surface. Additionally, the low-energy H- KED pe ak intensity behaves like the high-energy H+ KED peak intensity as a f unction of trimethylsilane exposure, and vice versa.