ANALYSIS OF HYDROGEN IN OXYGEN-DOPED POLYSILICON BY HE-4(-H ELASTIC RECOIL DETECTION())

Authors
WANG YZ HUANG BI CAO DX CAO JQ ZHU DZ SHEN KL
Citation
Yz. Wang et al., ANALYSIS OF HYDROGEN IN OXYGEN-DOPED POLYSILICON BY HE-4(-H ELASTIC RECOIL DETECTION()), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(1), 1994, pp. 111-113
Citations number
7
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
84
Issue
1
Year of publication
1994
Pages
111 - 113
Database
ISI
SICI code
0168-583X(1994)84:1<111:AOHIOP>2.0.ZU;2-2
Abstract
He-4+-H elastic recoil detection is used to profile hydrogen distribut ions in semi-insulating polysilicon films (SIPOS). The relation betwee n hydrogen content and reactant gas flow ratio r, and the hydrogen rel ease from SIPOS after annealing were measured. The experimental result s show that the hydrogen content is much less than the oxygen content in SIPOS films and rapidly decreases after annealing. The relation bet ween hydrogen content and oxygen content, and the hydrogen incorporati on with oxygen in SIPOS film were also discussed.