H. Ikeura et al., OBSERVATION OF NEUTRAL PRODUCTS OF A SOFT-X-RAY STIMULATED ETCHING REACTION IN THE SF6 A-SIO2 ABSORPTION SYSTEM/, Chemical physics letters, 217(1-2), 1994, pp. 131-135
Soft X-ray stimulated etching reactions in an SF6/a-SiO2 adsorption sy
stem have been studied by the direct detection of neutral products usi
ng quadrupole mass spectrometry. Various nascent products were observe
d by Sit, core-level excitation. The observation of SOxFy+ fragments i
n relatively high amounts suggests that active species contain not onl
y F atoms but also that S atoms play an important role. The excitation
energy dependence of the SiF+ intensity has shown evidence that core-
level excitation is more effective on the etch rate than valence-level
excitation, and that the etching is caused by surface excitation.