The adsorption and decomposition of ethylbromide on Si(100)-(2X1) is i
nvestigated as a way of generating surface ethyl groups. The interacti
ons of ethylbromide with Si are explored by a variety of methods inclu
ding ultraviolet photoelectron spectroscopy, temperature-programmed de
sorption and high-resolution electron energy loss spectroscopy. Ethylb
romide adsorbs molecularly on Si(100) at a surface temperature of 110
K. The C-Br bond cleaves by warming the surface to temperatures greate
r than 200 K. The resulting ethyl groups decompose at surface temperat
ures greater than 500 K to yield ethylene and molecular hydrogen. Deut
erium labelling of the ethyl group is used to verify that the predomin
ant pathway to ethylene production is through a beta-hydride eliminati
on step.