THE FARADAY-EFFECT IN DILUTE MAGNETIC SEMICONDUCTORS IN ULTRAHIGH MAGNETIC-FIELD

Citation
Pi. Nikitin et al., THE FARADAY-EFFECT IN DILUTE MAGNETIC SEMICONDUCTORS IN ULTRAHIGH MAGNETIC-FIELD, IEEE transactions on magnetics, 29(6), 1993, pp. 3422-3424
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189464
Volume
29
Issue
6
Year of publication
1993
Part
2
Pages
3422 - 3424
Database
ISI
SICI code
0018-9464(1993)29:6<3422:TFIDMS>2.0.ZU;2-#
Abstract
Ultrahigh magnetic fields up to 500 T have been used for investigation s of the Faraday effect in the dilute magnetic semiconductor Cd1-xMnxT e. Measurements have been carried out using samples of the content x = 0.43 at wavelengths 0.63 and 1.06 mu m at room temperature. Magnetic field dependence of the Faraday rotation is linear at both wavelengths up to 100 T. At higher fields there is a saturation in this dependenc e which has been interpreted as arising from a change of magnetization in the ensemble of Mn2+ ions. It is shown that it is necessary to con sider the interband exchange interaction and the direct influence of t he external magnetic field on the carrier spins for correct interpreta tion of the experimental results.