In this paper the behaviour of CoPtCr/SiO2 composite thin Alms with va
riable percentages of SiO2 (0%--> 35%) is reported. From measurements
of remanence curves and interaction characterisation via the delta plo
t curves, films with 20%--> 24% SiO2 show a wider range of switching f
ields and lower magnitude of interaction in comparison with the films
containing a lower concentration of SiO2