HIGH COERCIVITY OF BARIUM FERRITE (BAM) FILMS DEPOSITED BY ARC-DISCHARGE EVAPORATION

Citation
N. Matsushita et M. Naoe, HIGH COERCIVITY OF BARIUM FERRITE (BAM) FILMS DEPOSITED BY ARC-DISCHARGE EVAPORATION, IEEE transactions on magnetics, 29(6), 1993, pp. 4089-4091
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189464
Volume
29
Issue
6
Year of publication
1993
Part
2
Pages
4089 - 4091
Database
ISI
SICI code
0018-9464(1993)29:6<4089:HCOBF(>2.0.ZU;2-G
Abstract
A magnetoplumbite type of barium ferrite (BaM) films has been deposite d by using an are discharge evaporation method and then dependence of magnetic properties, crystal structure and Mossbauer spectra on anneal ing temperature T-A have been investigated. BaM films deposited at sub strate temperature T-s of 150 degrees C anti then annealed at 800 degr ees C exhibited large saturation magnetization M(s), the same as that of the bulk BaM (380 cmu/cc), and coercivity H-c as high as 2 kOe. The se M(s) and H-c were almost the same as those of BaM films deposited a t T-s above 500 degrees C. Since BaM films prepared In this study have moderately large M(s) and properly high H-c, they may be applicable f ur recording layers of rigid magnetic disks with high density.