N. Matsushita et M. Naoe, HIGH COERCIVITY OF BARIUM FERRITE (BAM) FILMS DEPOSITED BY ARC-DISCHARGE EVAPORATION, IEEE transactions on magnetics, 29(6), 1993, pp. 4089-4091
A magnetoplumbite type of barium ferrite (BaM) films has been deposite
d by using an are discharge evaporation method and then dependence of
magnetic properties, crystal structure and Mossbauer spectra on anneal
ing temperature T-A have been investigated. BaM films deposited at sub
strate temperature T-s of 150 degrees C anti then annealed at 800 degr
ees C exhibited large saturation magnetization M(s), the same as that
of the bulk BaM (380 cmu/cc), and coercivity H-c as high as 2 kOe. The
se M(s) and H-c were almost the same as those of BaM films deposited a
t T-s above 500 degrees C. Since BaM films prepared In this study have
moderately large M(s) and properly high H-c, they may be applicable f
ur recording layers of rigid magnetic disks with high density.