SILICON ON THIN INSULATOR - PREDICTION OF THE OXYGEN FLUENCE REQUIREDFOR THE FORMATION OF A CONTINUOUS BURIED OXIDE

Authors
CEROFOLINI GF BERTONI S MEDA L SPAGGIARI C
Citation
Gf. Cerofolini et al., SILICON ON THIN INSULATOR - PREDICTION OF THE OXYGEN FLUENCE REQUIREDFOR THE FORMATION OF A CONTINUOUS BURIED OXIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 22(2-3), 1994, pp. 172-180
Citations number
35
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
22
Issue
2-3
Year of publication
1994
Pages
172 - 180
Database
ISI
SICI code
0921-5107(1994)22:2-3<172:SOTI-P>2.0.ZU;2-3
Abstract
A scheme is proposed to explain the influence domain in which a contin uous buried SiO2 layer is formed by oxygen implantation and subsequent high temperature annealing. This scheme correctly describes the minim um nuence observed in single step implantation experiments and its tem perature and energy dependence; moreover, it also explains the seeming ly extravagant structure of this nuence domain (showing a narrow windo w of allowed values at relatively low fluence recently reported by Nak ashima and Izumi (Electron Lett., 26 (1990) 1647, J. Mater. Res., 8 (1 993) 523) and the reasons making it possible the low fluence process r eported by Meda et al. (Nucl. Instrum. Methods B, 80/81 (1993) 813.