NUMERICAL-SIMULATION STUDIES OF CONCENTRATION PROFILE AND GROWTH-RATEOF INP LPE

A diffusive transport model for the liquid phase epitaxial (LPE) growt h process of InP from in rich solution is presented. The concentration profiles of solute at different places in front of the growing crysta l interface under normal conditions of LPE at successive time interval s have been simulated using numerical analysis and applying appropriat e boundary conditions. From the concentration profiles, the growth rat e of InP has been calculated. Different cooling rates and undercooling have been used in our simulation work and hence the amount of InP etc hed or grown has been investigated. The estimated growth rates have be en compared with the reported experimental values.