CORRELATIONS BETWEEN THE THERMOELECTRIC-POWER AND HALL-EFFECT OF SN OR GE DOPED IN2O3 SEMICONDUCTORS

Authors
CAMPET G HAN SD WEN SJ SHASTRY MCR CHAMINADE B MARQUESTAUT E PORTIER J DORDOR P
Citation
G. Campet et al., CORRELATIONS BETWEEN THE THERMOELECTRIC-POWER AND HALL-EFFECT OF SN OR GE DOPED IN2O3 SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(2-3), 1994, pp. 274-278
Citations number
16
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
22
Issue
2-3
Year of publication
1994
Pages
274 - 278
Database
ISI
SICI code
0921-5107(1994)22:2-3<274:CBTTAH>2.0.ZU;2-Z
Abstract
The thermoelectric power and Hall effect of Sn or Ge doped In2O3 semic onductors were investigated based on a comparative study. Metal-type c onductivity occurs in both samples when the carrier concentration exce eds approximately 10(19) cm(-3). The carrier mobility is found to be h igher for Ge doped samples. The relation between the ''Lewis acid stre ngth'' of the dopant element and its scattering cross-section is also presented.