THE PROPERTIES OF HEAVILY COMPENSATED HIGH-RESISTIVITY GASB CRYSTALS

Authors
MILVIDSKAYA AG POLYAKOV AY KOLCHINA GP MILNES AG GOVORKOV AV SMIRNOV NB TUNITSKAYA IV
Citation
Ag. Milvidskaya et al., THE PROPERTIES OF HEAVILY COMPENSATED HIGH-RESISTIVITY GASB CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(2-3), 1994, pp. 279-282
Citations number
10
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
22
Issue
2-3
Year of publication
1994
Pages
279 - 282
Database
ISI
SICI code
0921-5107(1994)22:2-3<279:TPOHCH>2.0.ZU;2-A
Abstract
It is shown that high resistivity p-type GaSb closely compensated by t ellurium to about 10(3) Omega cm at 77 K can be obtained by Czochralsk i growth. The electrical, optical and luminescent properties of these crystals are dominated by the doubly charged Ga-Sb-related native acce ptors.