ADHESION OF A THIN SILICON-OXIDE FILM ON A POLYCARBONATE SUBSTRATE

Citation
S. Vallon et al., ADHESION OF A THIN SILICON-OXIDE FILM ON A POLYCARBONATE SUBSTRATE, Journal of electron spectroscopy and related phenomena, 64-5, 1993, pp. 849-856
Citations number
11
Categorie Soggetti
Spectroscopy
ISSN journal
03682048
Volume
64-5
Year of publication
1993
Pages
849 - 856
Database
ISI
SICI code
0368-2048(1993)64-5:<849:AOATSF>2.0.ZU;2-L
Abstract
The present paper analyzes the adhesion mechanisms of a silicon oxide film on a polycarbonate substrate, combining XPS, UV-visible ellipsome try and Fourier transform infrared phase-modulated ellipsometry (FTPME ) measurements. In particular, we present the new FTPME technique: Due to its submonolayer sensitivity to vibrational properties, it suits w ell to physico-chemical studies, such as plasma-surface interactions. A preliminary plasma treatment of the polymer substrate before film gr owth is found to increase the sticking of the first monolayers of the film, and therefore its adhesion, as shown by conventional thermal adh esion tests. The treatment consists of three successive steps: argon p lasma, (NH3, Ar) plasma and (SiH4, He, Ar) plasma. The first two steps induce a densification of the bulk and an activation of the surface ( formation of C-N bonds), while the silane plasma leads to the growth o f a very thin silicon oxide layer. In particular, the increase in the film adhesion appears to be closely related to the presence of a Si-O vibrational mode located at 1030 cm-(1).