SELECTED APPLICATIONS OF PHOTOTHERMAL AND PHOTOLUMINESCENCE HETERODYNE TECHNIQUES FOR PROCESS-CONTROL IN SILICON-WAFER MANUFACTURING

Citation
A. Ehlert et al., SELECTED APPLICATIONS OF PHOTOTHERMAL AND PHOTOLUMINESCENCE HETERODYNE TECHNIQUES FOR PROCESS-CONTROL IN SILICON-WAFER MANUFACTURING, Optical engineering, 36(2), 1997, pp. 446-458
Citations number
31
Categorie Soggetti
Optics
Journal title
ISSN journal
00913286
Volume
36
Issue
2
Year of publication
1997
Pages
446 - 458
Database
ISI
SICI code
0091-3286(1997)36:2<446:SAOPAP>2.0.ZU;2-6
Abstract
Two noncontact laser-based heterodyne techniques, photothermal heterod yne (PTH) and photoluminescence heterodyne (PLH), are introduced and a pplied to processing and quality control in silicon wafer manufacturin g, The crystallographic characteristics of process-induced defects in silicon wafers are suitable for the application of PTH and PLH techniq ues, which are demonstrated on selected examples from different steps of silicon wafer production, Both PLH and PTH techniques meet the dema nd for nondestructive and on-line-suitable measurement in the semicond uctor industry. (C) 1997 Society of Photo-Optical Instrumentation Engi neers.