DIRECT DETERMINATION OF IMPACT IONIZATION QUANTUM YIELD IN SI BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY

Authors
BAUER A LUDEKE R
Citation
A. Bauer et R. Ludeke, DIRECT DETERMINATION OF IMPACT IONIZATION QUANTUM YIELD IN SI BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physical review letters, 72(6), 1994, pp. 928-931
Citations number
24
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
72
Issue
6
Year of publication
1994
Pages
928 - 931
Database
ISI
SICI code
0031-9007(1994)72:6<928:DDOIIQ>2.0.ZU;2-V
Abstract
Ballistic-electron-emission spectroscopy on Si(111)-(7 x 7) patches in pinholes of thin NiSi2 films on n-type Si(111) reveals collector curr ents as high as 210% of the tunneling current at a tip bias of 10 V. T his electron multiplication is assigned to impact ionization in Si. It s quantum yield up to 7 eV kinetic energy is extracted from the spectr a and compared to recent theoretical results.