DEPOSITION OF FERROELECTRIC PB(ZR0.52TI0.48)O-3 FILMS ON PLATINIZED SILICON USING ND-YAG LASER

Lead zirconate titanate (PZT) thin films were deposited onto the Pt/Ti /SiO2/Si substrate by the pulsed laser deposition with the second harm onic wavelength (532 nm) of Nd:YAG laser. In order to determine the op timum conditions for the film deposition, the phase of the films were investigated as functions of ambient oxygen pressure, substrate temper ature, and laser fluence. Also the chemical composition analysis was c onducted for the PZT films deposited under various ambient oxygen pres sure. When the distance between substrate and bulk PZT target is set t o 20 mm, the optimum conditions have been determined to be 3 torr of o xygen pressure, 1.5 J/cm(2) of laser fluence, and 823-848(+/-10) K ran ge of substrate temperature. At these conditions, perovskite phase PZT films were obtained on platinized silicon. The chemical composition o f the films is very similar to that of PZT bulk target. The physical s tructure of the deposited films analyzed by scanning electron microsco py shows a columnar morphology perpendicular to the substrate surface. Capacitance-Voltage hysteresis loop measurements show also a typical characteristics of ferroelectric thin film. The dielectric constant is found to be 528 for the 0.48 mu m thickness of PZT thin film.