DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION

Authors
BACCHETTA N BISELLO D CANALI C FUOCHI PG GOTRA Y PACCAGNELLA A VERZELLESI G
Citation
N. Bacchetta et al., DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION, IEEE transactions on nuclear science, 40(6), 1993, pp. 2001-2007
Citations number
19
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
6
Year of publication
1993
Part
2
Pages
2001 - 2007
Database
ISI
SICI code
0018-9499(1993)40:6<2001:DOSAMD>2.0.ZU;2-G
Abstract
Results are presented showing the radiation response of ac-coupled FOX FET biased microstrip detectors and related test patterns to be used i n the microvertex detector of the CDF experiment at Fermi National Lab oratory. Radiation tolerance of detectors to gamma and proton irradiat ion has been tested and the radiation induced variations of the dc ele ctrical parameters have been analyzed. Long term post-irradiation beha viour of detector characteristics have been studied, and the relevant room temperature annealing phenomena have been discussed.