Gk. Vlasov et al., EXCITONIC DETECTORS OF INFRARED AND SUBMILLIMETER RADIATION, International journal of infrared and millimeter waves, 15(1), 1994, pp. 121-135
The theory of new type detectors based on the ''quenching'' of seconda
ry emission in direct-gap semiconductors (lines of Raman light scatter
ing due to interaction between free and bound excitons in the crystal,
and also bands of ''edge'' radiation) caused by IR or submillimeter r
adiation is proposed. The results obtained are confirmed by the experi
ment performed for CdS crystal excited by ultraviolet radiation of mer
cury lamp, at liquid helium temperature.