THEORETICAL AND EXPERIMENTAL STUDIES OF ELECTRIC-FIELD-INDUCED REFRACTIVE-INDEX CHANGE IN QUANTUM-FILM, QUANTUM-WIRE, AND QUANTUM-BOX STRUCTURES

In this article we report theoretical as well as experimental studies of the electric-field-induced refractive index change in InGaAs/InP qu antum-well structures, viz., quantum-film, quantum-wire, and quantum-b ox structures. The refractive index change, easily measured using a Ma ch-Zehnder interferometer setup, was around 1%, 4%, and 7% in quantum film, quantum wire, and quantum box, respectively, in the longer-wavel ength region corresponding to the positive refractive index change pea k. Moreover, we will discuss that the refractive index change dependen cy on the polarization of incident light in a quantum film can be cont rolled by introducing suitable tensile strain in it. It was found that for a well width of II nm, 0.3% tensile strain should be induced to o btain polarization-independent refractive index change. (C) 1994 John Wiley and Sons, Inc.